$Should the Refractive Index at 633 nm Be Used to Characterize Silicon Nitride Films?$

Should the Refractive Index at 633 nm Be Used to Characterize Silicon Nitride Films?

10.1109/PVSC.2016.7750187

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Bibliographic Details
Main Authors:	HAMEIRI, ZIV, BOROJEVIC, NINO, MAI, LY, NANDAKUMAR, NAOMI, KIM, KYUNG, WINDERBAUM, SAUL
Other Authors:	SOLAR ENERGY RESEARCH INST OF S'PORE
Format:	Conference or Workshop Item
Published:	IEEE 2019
Subjects:	Science & Technology Technology Physical Sciences Energy & Fuels Engineering, Electrical & Electronic Physics, Applied Engineering Physics CRYSTALLINE SILICON PASSIVATION
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/155120
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-155120
record_format	dspace
spelling	sg-nus-scholar.10635-1551202022-09-30T00:42:47Z Should the Refractive Index at 633 nm Be Used to Characterize Silicon Nitride Films? HAMEIRI, ZIV BOROJEVIC, NINO MAI, LY NANDAKUMAR, NAOMI KIM, KYUNG WINDERBAUM, SAUL SOLAR ENERGY RESEARCH INST OF S'PORE Science & Technology Technology Physical Sciences Energy & Fuels Engineering, Electrical & Electronic Physics, Applied Engineering Physics CRYSTALLINE SILICON PASSIVATION 10.1109/PVSC.2016.7750187 2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) 2016-November 2900-2904 2019-06-04T02:49:47Z 2019-06-04T02:49:47Z 2016-01-01 2019-06-03T06:07:41Z Conference Paper HAMEIRI, ZIV, BOROJEVIC, NINO, MAI, LY, NANDAKUMAR, NAOMI, KIM, KYUNG, WINDERBAUM, SAUL (2016-01-01). Should the Refractive Index at 633 nm Be Used to Characterize Silicon Nitride Films?. 2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) 2016-November : 2900-2904. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2016.7750187 9781509027248 01608371 https://scholarbank.nus.edu.sg/handle/10635/155120 IEEE Elements
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Science & Technology Technology Physical Sciences Energy & Fuels Engineering, Electrical & Electronic Physics, Applied Engineering Physics CRYSTALLINE SILICON PASSIVATION
spellingShingle	Science & Technology Technology Physical Sciences Energy & Fuels Engineering, Electrical & Electronic Physics, Applied Engineering Physics CRYSTALLINE SILICON PASSIVATION HAMEIRI, ZIV BOROJEVIC, NINO MAI, LY NANDAKUMAR, NAOMI KIM, KYUNG WINDERBAUM, SAUL Should the Refractive Index at 633 nm Be Used to Characterize Silicon Nitride Films?
description	10.1109/PVSC.2016.7750187
author2	SOLAR ENERGY RESEARCH INST OF S'PORE
author_facet	SOLAR ENERGY RESEARCH INST OF S'PORE HAMEIRI, ZIV BOROJEVIC, NINO MAI, LY NANDAKUMAR, NAOMI KIM, KYUNG WINDERBAUM, SAUL
format	Conference or Workshop Item
author	HAMEIRI, ZIV BOROJEVIC, NINO MAI, LY NANDAKUMAR, NAOMI KIM, KYUNG WINDERBAUM, SAUL
author_sort	HAMEIRI, ZIV
title	Should the Refractive Index at 633 nm Be Used to Characterize Silicon Nitride Films?
title_short	Should the Refractive Index at 633 nm Be Used to Characterize Silicon Nitride Films?
title_full	Should the Refractive Index at 633 nm Be Used to Characterize Silicon Nitride Films?
title_fullStr	Should the Refractive Index at 633 nm Be Used to Characterize Silicon Nitride Films?
title_full_unstemmed	Should the Refractive Index at 633 nm Be Used to Characterize Silicon Nitride Films?
title_sort	should the refractive index at 633 nm be used to characterize silicon nitride films?
publisher	IEEE
publishDate	2019
url	https://scholarbank.nus.edu.sg/handle/10635/155120
_version_	1745574530914451456

Should the Refractive Index at 633 nm Be Used to Characterize Silicon Nitride Films?

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