Should the Refractive Index at 633 nm Be Used to Characterize Silicon Nitride Films?

• المؤلفون الرئيسيون: HAMEIRI, ZIV, BOROJEVIC, NINO, MAI, LY, NANDAKUMAR, NAOMI, KIM, KYUNG, WINDERBAUM, SAUL
• مؤلفون آخرون: SOLAR ENERGY RESEARCH INST OF S'PORE
• التنسيق: Conference or Workshop Item
• منشور في: IEEE 2019
• الموضوعات: Science & Technology; Technology; Physical Sciences; Energy & Fuels; Engineering, Electrical & Electronic; Physics, Applied; Engineering; Physics; CRYSTALLINE SILICON; PASSIVATION
• الوصول للمادة أونلاين: https://scholarbank.nus.edu.sg/handle/10635/155120

10.1109/PVSC.2016.7750187