Should the Refractive Index at 633 nm Be Used to Characterize Silicon Nitride Films?

• Main Authors: HAMEIRI, ZIV, BOROJEVIC, NINO, MAI, LY, NANDAKUMAR, NAOMI, KIM, KYUNG, WINDERBAUM, SAUL
• Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
• Format: Conference or Workshop Item
• Published: IEEE 2019
• Subjects: Science & Technology; Technology; Physical Sciences; Energy & Fuels; Engineering, Electrical & Electronic; Physics, Applied; Engineering; Physics; CRYSTALLINE SILICON; PASSIVATION
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/155120
• Institution: National University of Singapore

10.1109/PVSC.2016.7750187