Spin-Transfer Torque Memories: Devices, Circuits, and Systems

Spin-Transfer Torque Memories: Devices, Circuits, and Systems

10.1109/JPROC.2016.2521712

Saved in:

Bibliographic Details
Main Authors:	Fong, Xuanyao, Kim, Yusung, Venkatesan, Rangharajan, Choday, Sri Harsha, Raghunathan, Anand, Roy, Kaushik
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Format:	Article
Language:	English
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:	Science & Technology Technology Engineering, Electrical & Electronic Engineering Design of spin-transfer torque MRAM emerging nonvolatile memory technology magnetic tunnel junction nonvolatile on-chip caches MAGNETIC TUNNEL-JUNCTIONS STT-MRAM MICROMAGNETIC SIMULATION GIANT MAGNETORESISTANCE ROOM-TEMPERATURE ORBIT TORQUE RAM BIT POLARIZATION ANISOTROPY
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/156191
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore
Language:	English

Description
Summary:	10.1109/JPROC.2016.2521712