Spin-Transfer Torque Memories: Devices, Circuits, and Systems
10.1109/JPROC.2016.2521712
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IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2019
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sg-nus-scholar.10635-1561912023-09-21T08:44:58Z Spin-Transfer Torque Memories: Devices, Circuits, and Systems Fong, Xuanyao Kim, Yusung Venkatesan, Rangharajan Choday, Sri Harsha Raghunathan, Anand Roy, Kaushik DEPT OF ELECTRICAL & COMPUTER ENGG Science & Technology Technology Engineering, Electrical & Electronic Engineering Design of spin-transfer torque MRAM emerging nonvolatile memory technology magnetic tunnel junction nonvolatile on-chip caches MAGNETIC TUNNEL-JUNCTIONS STT-MRAM MICROMAGNETIC SIMULATION GIANT MAGNETORESISTANCE ROOM-TEMPERATURE ORBIT TORQUE RAM BIT POLARIZATION ANISOTROPY 10.1109/JPROC.2016.2521712 PROCEEDINGS OF THE IEEE 104 7 1449-1488 2019-07-03T03:40:33Z 2019-07-03T03:40:33Z 2016-07-01 2019-07-03T03:24:43Z Article Fong, Xuanyao, Kim, Yusung, Venkatesan, Rangharajan, Choday, Sri Harsha, Raghunathan, Anand, Roy, Kaushik (2016-07-01). Spin-Transfer Torque Memories: Devices, Circuits, and Systems. PROCEEDINGS OF THE IEEE 104 (7) : 1449-1488. ScholarBank@NUS Repository. https://doi.org/10.1109/JPROC.2016.2521712 0018-9219 1558-2256 https://scholarbank.nus.edu.sg/handle/10635/156191 en IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Elements |
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National University of Singapore |
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Asia |
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Singapore Singapore |
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English |
| topic |
Science & Technology Technology Engineering, Electrical & Electronic Engineering Design of spin-transfer torque MRAM emerging nonvolatile memory technology magnetic tunnel junction nonvolatile on-chip caches MAGNETIC TUNNEL-JUNCTIONS STT-MRAM MICROMAGNETIC SIMULATION GIANT MAGNETORESISTANCE ROOM-TEMPERATURE ORBIT TORQUE RAM BIT POLARIZATION ANISOTROPY |
| spellingShingle |
Science & Technology Technology Engineering, Electrical & Electronic Engineering Design of spin-transfer torque MRAM emerging nonvolatile memory technology magnetic tunnel junction nonvolatile on-chip caches MAGNETIC TUNNEL-JUNCTIONS STT-MRAM MICROMAGNETIC SIMULATION GIANT MAGNETORESISTANCE ROOM-TEMPERATURE ORBIT TORQUE RAM BIT POLARIZATION ANISOTROPY Fong, Xuanyao Kim, Yusung Venkatesan, Rangharajan Choday, Sri Harsha Raghunathan, Anand Roy, Kaushik Spin-Transfer Torque Memories: Devices, Circuits, and Systems |
| description |
10.1109/JPROC.2016.2521712 |
| author2 |
DEPT OF ELECTRICAL & COMPUTER ENGG |
| author_facet |
DEPT OF ELECTRICAL & COMPUTER ENGG Fong, Xuanyao Kim, Yusung Venkatesan, Rangharajan Choday, Sri Harsha Raghunathan, Anand Roy, Kaushik |
| format |
Article |
| author |
Fong, Xuanyao Kim, Yusung Venkatesan, Rangharajan Choday, Sri Harsha Raghunathan, Anand Roy, Kaushik |
| author_sort |
Fong, Xuanyao |
| title |
Spin-Transfer Torque Memories: Devices, Circuits, and Systems |
| title_short |
Spin-Transfer Torque Memories: Devices, Circuits, and Systems |
| title_full |
Spin-Transfer Torque Memories: Devices, Circuits, and Systems |
| title_fullStr |
Spin-Transfer Torque Memories: Devices, Circuits, and Systems |
| title_full_unstemmed |
Spin-Transfer Torque Memories: Devices, Circuits, and Systems |
| title_sort |
spin-transfer torque memories: devices, circuits, and systems |
| publisher |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| publishDate |
2019 |
| url |
https://scholarbank.nus.edu.sg/handle/10635/156191 |
| _version_ |
1778169139244826624 |