Spin-Transfer Torque Memories: Devices, Circuits, and Systems

• Main Authors: Fong, Xuanyao, Kim, Yusung, Venkatesan, Rangharajan, Choday, Sri Harsha, Raghunathan, Anand, Roy, Kaushik
• Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
• Format: Article
• Language: English
• Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
• Subjects: Science & Technology; Technology; Engineering, Electrical & Electronic; Engineering; Design of spin-transfer torque MRAM; emerging nonvolatile memory technology; magnetic tunnel junction; nonvolatile on-chip caches; MAGNETIC TUNNEL-JUNCTIONS; STT-MRAM; MICROMAGNETIC SIMULATION; GIANT MAGNETORESISTANCE; ROOM-TEMPERATURE; ORBIT TORQUE; RAM; BIT; POLARIZATION; ANISOTROPY
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/156191
• Institution: National University of Singapore

10.1109/JPROC.2016.2521712