Spin-Transfer Torque Memories: Devices, Circuits, and Systems

Spin-Transfer Torque Memories: Devices, Circuits, and Systems

10.1109/JPROC.2016.2521712

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Bibliographic Details
Main Authors: Fong, Xuanyao, Kim, Yusung, Venkatesan, Rangharajan, Choday, Sri Harsha, Raghunathan, Anand, Roy, Kaushik
Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
Format: Article
Language:English
Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:
Science & Technology
Technology
Engineering, Electrical & Electronic
Engineering
Design of spin-transfer torque MRAM
emerging nonvolatile memory technology
magnetic tunnel junction
nonvolatile on-chip caches
MAGNETIC TUNNEL-JUNCTIONS
STT-MRAM
MICROMAGNETIC SIMULATION
GIANT MAGNETORESISTANCE
ROOM-TEMPERATURE
ORBIT TORQUE
RAM
BIT
POLARIZATION
ANISOTROPY
Online Access:https://scholarbank.nus.edu.sg/handle/10635/156191
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Institution: National University of Singapore
Language: English

Internet

https://scholarbank.nus.edu.sg/handle/10635/156191

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