Novel III-V mosfet integrated with high-k dielectric and metal gate for future CMOS technology

Master's

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Main Author: LIN JIANQIANG
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Theses and Dissertations
Language:English
Published: 2010
Subjects:
Online Access:https://scholarbank.nus.edu.sg/handle/10635/16571
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Institution: National University of Singapore
Language: English
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spelling sg-nus-scholar.10635-165712020-11-18T02:58:42Z Novel III-V mosfet integrated with high-k dielectric and metal gate for future CMOS technology LIN JIANQIANG ELECTRICAL & COMPUTER ENGINEERING LEE SUNGJOO MOSFET, InGaAs, high mobility, passivation, Self-alignment Master's MASTER OF ENGINEERING 2010-04-08T11:06:38Z 2010-04-08T11:06:38Z 2009-08-20 Thesis LIN JIANQIANG (2009-08-20). Novel III-V mosfet integrated with high-k dielectric and metal gate for future CMOS technology. ScholarBank@NUS Repository. https://scholarbank.nus.edu.sg/handle/10635/16571 NOT_IN_WOS en
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
language English
topic MOSFET, InGaAs, high mobility, passivation, Self-alignment
spellingShingle MOSFET, InGaAs, high mobility, passivation, Self-alignment
LIN JIANQIANG
Novel III-V mosfet integrated with high-k dielectric and metal gate for future CMOS technology
description Master's
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
LIN JIANQIANG
format Theses and Dissertations
author LIN JIANQIANG
author_sort LIN JIANQIANG
title Novel III-V mosfet integrated with high-k dielectric and metal gate for future CMOS technology
title_short Novel III-V mosfet integrated with high-k dielectric and metal gate for future CMOS technology
title_full Novel III-V mosfet integrated with high-k dielectric and metal gate for future CMOS technology
title_fullStr Novel III-V mosfet integrated with high-k dielectric and metal gate for future CMOS technology
title_full_unstemmed Novel III-V mosfet integrated with high-k dielectric and metal gate for future CMOS technology
title_sort novel iii-v mosfet integrated with high-k dielectric and metal gate for future cmos technology
publishDate 2010
url https://scholarbank.nus.edu.sg/handle/10635/16571
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