A COMPARATIVE STUDY OF MOS CAPACITORS FABRICATED ON SINGLE-CRYSTAL AND POLYCRYSTALLINE SILICON
Master's
Saved in:
Main Author: | TAY TUANG MEE |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Theses and Dissertations |
Published: |
2020
|
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/171487 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers
by: Ling, C.H., et al.
Published: (2014) -
Observation of zero temperature coefficient of capacitance in the MOS capacitor
by: Ling, C.H.
Published: (2014) -
Observation of zero temperature coefficient of capacitance in the MOS capacitor
by: Ling, C.H.
Published: (2014) -
Fabrication of few layers of MoS2 coated TiO2 inverse opals
by: Tuang, Shu Ting
Published: (2017) -
Fabrication of large-area ultra-thin single crystal silicon membranes
by: Dang, Z.Y., et al.
Published: (2014)