AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating

10.1038/srep14092

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Main Authors:	Liu X., Lu Y., Yu W., Wu J., He J., Tang D., Liu Z., Somasuntharam P., Zhu D., Liu W., Cao P., Han S., Chen S., Seow Tan L.
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	Nature Publishing Group 2020
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/175485
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-1754852024-04-25T03:33:01Z AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating Liu X. Lu Y. Yu W. Wu J. He J. Tang D. Liu Z. Somasuntharam P. Zhu D. Liu W. Cao P. Han S. Chen S. Seow Tan L. ELECTRICAL AND COMPUTER ENGINEERING 10.1038/srep14092 Scientific Reports 5 14092 2020-09-10T01:51:39Z 2020-09-10T01:51:39Z 2015 Article Liu X., Lu Y., Yu W., Wu J., He J., Tang D., Liu Z., Somasuntharam P., Zhu D., Liu W., Cao P., Han S., Chen S., Seow Tan L. (2015). AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating. Scientific Reports 5 : 14092. ScholarBank@NUS Repository. https://doi.org/10.1038/srep14092 20452322 https://scholarbank.nus.edu.sg/handle/10635/175485 Nature Publishing Group Unpaywall 20200831
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1038/srep14092
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Liu X. Lu Y. Yu W. Wu J. He J. Tang D. Liu Z. Somasuntharam P. Zhu D. Liu W. Cao P. Han S. Chen S. Seow Tan L.
format	Article
author	Liu X. Lu Y. Yu W. Wu J. He J. Tang D. Liu Z. Somasuntharam P. Zhu D. Liu W. Cao P. Han S. Chen S. Seow Tan L.
spellingShingle	Liu X. Lu Y. Yu W. Wu J. He J. Tang D. Liu Z. Somasuntharam P. Zhu D. Liu W. Cao P. Han S. Chen S. Seow Tan L. AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating
author_sort	Liu X.
title	AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating
title_short	AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating
title_full	AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating
title_fullStr	AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating
title_full_unstemmed	AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating
title_sort	algan/gan metal-oxide-semiconductor high-electron-mobility transistor with polarized p(vdf-trfe) ferroelectric polymer gating
publisher	Nature Publishing Group
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/175485
_version_	1800914374270910464

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating

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