AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating

10.1038/srep14092

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Bibliographic Details
Main Authors:	Liu X., Lu Y., Yu W., Wu J., He J., Tang D., Liu Z., Somasuntharam P., Zhu D., Liu W., Cao P., Han S., Chen S., Seow Tan L.
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	Nature Publishing Group 2020
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/175485
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

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