AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating

• Main Authors: Liu X., Lu Y., Yu W., Wu J., He J., Tang D., Liu Z., Somasuntharam P., Zhu D., Liu W., Cao P., Han S., Chen S., Seow Tan L.
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Published: Nature Publishing Group 2020
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/175485
• Institution: National University of Singapore

10.1038/srep14092