Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
10.1186/s11671-017-2271-x
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sg-nus-scholar.10635-1795492023-08-10T08:33:29Z Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy Duan, T.L Pan, J.S Wang, N Cheng, K Yu, H.Y DEPT OF PHYSICS Aluminum alloys Atomic layer deposition Band structure Deposition Gallium nitride Photoelectrons Photons Polarization X ray photoelectron spectroscopy Angle resolved x ray photoelectron spectroscopy ARXPS Gallium nitrides (GaN) Interface regions Interfacial layer Negative charge Positive charges Surface polarizations Gallium alloys 10.1186/s11671-017-2271-x Nanoscale Research Letters 12 499 2020-10-23T04:56:53Z 2020-10-23T04:56:53Z 2017 Article Duan, T.L, Pan, J.S, Wang, N, Cheng, K, Yu, H.Y (2017). Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy. Nanoscale Research Letters 12 : 499. ScholarBank@NUS Repository. https://doi.org/10.1186/s11671-017-2271-x 19317573 https://scholarbank.nus.edu.sg/handle/10635/179549 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Unpaywall 20201031 |
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Aluminum alloys Atomic layer deposition Band structure Deposition Gallium nitride Photoelectrons Photons Polarization X ray photoelectron spectroscopy Angle resolved x ray photoelectron spectroscopy ARXPS Gallium nitrides (GaN) Interface regions Interfacial layer Negative charge Positive charges Surface polarizations Gallium alloys |
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Aluminum alloys Atomic layer deposition Band structure Deposition Gallium nitride Photoelectrons Photons Polarization X ray photoelectron spectroscopy Angle resolved x ray photoelectron spectroscopy ARXPS Gallium nitrides (GaN) Interface regions Interfacial layer Negative charge Positive charges Surface polarizations Gallium alloys Duan, T.L Pan, J.S Wang, N Cheng, K Yu, H.Y Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy |
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10.1186/s11671-017-2271-x |
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DEPT OF PHYSICS |
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DEPT OF PHYSICS Duan, T.L Pan, J.S Wang, N Cheng, K Yu, H.Y |
format |
Article |
author |
Duan, T.L Pan, J.S Wang, N Cheng, K Yu, H.Y |
author_sort |
Duan, T.L |
title |
Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy |
title_short |
Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy |
title_full |
Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy |
title_fullStr |
Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy |
title_full_unstemmed |
Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy |
title_sort |
investigation on surface polarization of al2o3-capped gan/algan/gan heterostructure by angle-resolved x-ray photoelectron spectroscopy |
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2020 |
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https://scholarbank.nus.edu.sg/handle/10635/179549 |
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1779152498053873664 |