Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy

10.1186/s11671-017-2271-x

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Main Authors: Duan, T.L, Pan, J.S, Wang, N, Cheng, K, Yu, H.Y
Other Authors: DEPT OF PHYSICS
Format: Article
Published: 2020
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Online Access:https://scholarbank.nus.edu.sg/handle/10635/179549
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spelling sg-nus-scholar.10635-1795492023-08-10T08:33:29Z Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy Duan, T.L Pan, J.S Wang, N Cheng, K Yu, H.Y DEPT OF PHYSICS Aluminum alloys Atomic layer deposition Band structure Deposition Gallium nitride Photoelectrons Photons Polarization X ray photoelectron spectroscopy Angle resolved x ray photoelectron spectroscopy ARXPS Gallium nitrides (GaN) Interface regions Interfacial layer Negative charge Positive charges Surface polarizations Gallium alloys 10.1186/s11671-017-2271-x Nanoscale Research Letters 12 499 2020-10-23T04:56:53Z 2020-10-23T04:56:53Z 2017 Article Duan, T.L, Pan, J.S, Wang, N, Cheng, K, Yu, H.Y (2017). Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy. Nanoscale Research Letters 12 : 499. ScholarBank@NUS Repository. https://doi.org/10.1186/s11671-017-2271-x 19317573 https://scholarbank.nus.edu.sg/handle/10635/179549 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Unpaywall 20201031
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Aluminum alloys
Atomic layer deposition
Band structure
Deposition
Gallium nitride
Photoelectrons
Photons
Polarization
X ray photoelectron spectroscopy
Angle resolved x ray photoelectron spectroscopy
ARXPS
Gallium nitrides (GaN)
Interface regions
Interfacial layer
Negative charge
Positive charges
Surface polarizations
Gallium alloys
spellingShingle Aluminum alloys
Atomic layer deposition
Band structure
Deposition
Gallium nitride
Photoelectrons
Photons
Polarization
X ray photoelectron spectroscopy
Angle resolved x ray photoelectron spectroscopy
ARXPS
Gallium nitrides (GaN)
Interface regions
Interfacial layer
Negative charge
Positive charges
Surface polarizations
Gallium alloys
Duan, T.L
Pan, J.S
Wang, N
Cheng, K
Yu, H.Y
Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
description 10.1186/s11671-017-2271-x
author2 DEPT OF PHYSICS
author_facet DEPT OF PHYSICS
Duan, T.L
Pan, J.S
Wang, N
Cheng, K
Yu, H.Y
format Article
author Duan, T.L
Pan, J.S
Wang, N
Cheng, K
Yu, H.Y
author_sort Duan, T.L
title Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
title_short Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
title_full Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
title_fullStr Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
title_full_unstemmed Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
title_sort investigation on surface polarization of al2o3-capped gan/algan/gan heterostructure by angle-resolved x-ray photoelectron spectroscopy
publishDate 2020
url https://scholarbank.nus.edu.sg/handle/10635/179549
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