Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy

• المؤلفون الرئيسيون: Duan, T.L, Pan, J.S, Wang, N, Cheng, K, Yu, H.Y
• مؤلفون آخرون: DEPT OF PHYSICS
• التنسيق: مقال
• منشور في: 2020
• الموضوعات: Aluminum alloys; Atomic layer deposition; Band structure; Deposition; Gallium nitride; Photoelectrons; Photons; Polarization; X ray photoelectron spectroscopy; Angle resolved x ray photoelectron spectroscopy; ARXPS; Gallium nitrides (GaN); Interface regions; Interfacial layer; Negative charge; Positive charges; Surface polarizations; Gallium alloys
• الوصول للمادة أونلاين: https://scholarbank.nus.edu.sg/handle/10635/179549
• المؤسسة: National University of Singapore

10.1186/s11671-017-2271-x