Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy

Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy

10.1186/s11671-017-2271-x

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Bibliographic Details
Main Authors:	Duan, T.L, Pan, J.S, Wang, N, Cheng, K, Yu, H.Y
Other Authors:	DEPT OF PHYSICS
Format:	Article
Published:	2020
Subjects:	Aluminum alloys Atomic layer deposition Band structure Deposition Gallium nitride Photoelectrons Photons Polarization X ray photoelectron spectroscopy Angle resolved x ray photoelectron spectroscopy ARXPS Gallium nitrides (GaN) Interface regions Interfacial layer Negative charge Positive charges Surface polarizations Gallium alloys
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/179549
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Institution:	National University of Singapore

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