Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
10.1186/s11671-017-2271-x
Saved in:
Main Authors: | Duan, T.L, Pan, J.S, Wang, N, Cheng, K, Yu, H.Y |
---|---|
Other Authors: | DEPT OF PHYSICS |
Format: | Article |
Published: |
2020
|
Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/179549 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure
by: Duan, Tian Li, et al.
Published: (2019) -
Experimental demonstration of a two-dimensional hole gas in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy
by: Méchin, Loïc, et al.
Published: (2024) -
Effects of surface plasma treatment on n-GaN ohmic contact formation
by: Li, L.K., et al.
Published: (2014) -
Thickness dependent valence fluctuation of CeN film
by: Xiao, W., et al.
Published: (2014) -
Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation
by: Liu, C., et al.
Published: (2014)