Highly Scaled Strained Silicon-On-Insulator Technology for the 5G Era: Impact of Geometry and Annealing on Strain Retention and Device Performance of nMOSFETs

Highly Scaled Strained Silicon-On-Insulator Technology for the 5G Era: Impact of Geometry and Annealing on Strain Retention and Device Performance of nMOSFETs

10.1109/TED.2019.2904313

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Bibliographic Details
Main Author: THEAN VOON YEW, AARON
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: Institute of Electrical and Electronics Engineers Inc. 2020
Online Access:https://scholarbank.nus.edu.sg/handle/10635/184240
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Institution: National University of Singapore
Description
Summary:10.1109/TED.2019.2904313

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