Highly Scaled Strained Silicon-On-Insulator Technology for the 5G Era: Impact of Geometry and Annealing on Strain Retention and Device Performance of nMOSFETs
10.1109/TED.2019.2904313
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| Format: | Article |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2020
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| Online Access: | https://scholarbank.nus.edu.sg/handle/10635/184240 |
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| Institution: | National University of Singapore |
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