Method to reduce compressive stress in the silicon substrate during silicidation

Method to reduce compressive stress in the silicon substrate during silicidation

US6284610

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Bibliographic Details
Main Authors: CHA, RANDALL CHER LIANG, CHUA, CHEE TEE, PEY, KIN LEONG, CHAN, LAP
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Patent
Published: 2012
Online Access:http://scholarbank.nus.edu.sg/handle/10635/32598
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Institution: National University of Singapore
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Summary:US6284610

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