Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure
10.1063/1.1615840
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sg-nus-scholar.10635-509072023-10-25T22:38:53Z Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure Ho, V. Teo, L.W. Choi, W.K. Chim, W.K. Tay, M.S. Antoniadis, D.A. Fitzgerald, E.A. Du, A.Y. Tung, C.H. Liu, R. Wee, A.T.S. INSTITUTE OF ENGINEERING SCIENCE ELECTRICAL & COMPUTER ENGINEERING PHYSICS 10.1063/1.1615840 Applied Physics Letters 83 17 3558-3560 APPLA 2014-04-24T07:20:51Z 2014-04-24T07:20:51Z 2003-10-27 Article Ho, V., Teo, L.W., Choi, W.K., Chim, W.K., Tay, M.S., Antoniadis, D.A., Fitzgerald, E.A., Du, A.Y., Tung, C.H., Liu, R., Wee, A.T.S. (2003-10-27). Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure. Applied Physics Letters 83 (17) : 3558-3560. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1615840 00036951 http://scholarbank.nus.edu.sg/handle/10635/50907 000186068400038 Scopus |
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Asia |
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Singapore Singapore |
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10.1063/1.1615840 |
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INSTITUTE OF ENGINEERING SCIENCE |
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INSTITUTE OF ENGINEERING SCIENCE Ho, V. Teo, L.W. Choi, W.K. Chim, W.K. Tay, M.S. Antoniadis, D.A. Fitzgerald, E.A. Du, A.Y. Tung, C.H. Liu, R. Wee, A.T.S. |
| format |
Article |
| author |
Ho, V. Teo, L.W. Choi, W.K. Chim, W.K. Tay, M.S. Antoniadis, D.A. Fitzgerald, E.A. Du, A.Y. Tung, C.H. Liu, R. Wee, A.T.S. |
| spellingShingle |
Ho, V. Teo, L.W. Choi, W.K. Chim, W.K. Tay, M.S. Antoniadis, D.A. Fitzgerald, E.A. Du, A.Y. Tung, C.H. Liu, R. Wee, A.T.S. Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure |
| author_sort |
Ho, V. |
| title |
Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure |
| title_short |
Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure |
| title_full |
Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure |
| title_fullStr |
Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure |
| title_full_unstemmed |
Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure |
| title_sort |
effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/50907 |
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1781411630331985920 |