Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure
10.1063/1.1615840
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Main Authors: | Ho, V., Teo, L.W., Choi, W.K., Chim, W.K., Tay, M.S., Antoniadis, D.A., Fitzgerald, E.A., Du, A.Y., Tung, C.H., Liu, R., Wee, A.T.S. |
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Other Authors: | INSTITUTE OF ENGINEERING SCIENCE |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/50907 |
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Institution: | National University of Singapore |
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