Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure

Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure

10.1063/1.1615840

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Bibliographic Details
Main Authors: Ho, V., Teo, L.W., Choi, W.K., Chim, W.K., Tay, M.S., Antoniadis, D.A., Fitzgerald, E.A., Du, A.Y., Tung, C.H., Liu, R., Wee, A.T.S.
Other Authors: INSTITUTE OF ENGINEERING SCIENCE
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/50907
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/50907

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