A FinFET and Tri-gate MOSFET's channel structure patterning and its influence on the device performance

A FinFET and Tri-gate MOSFET's channel structure patterning and its influence on the device performance

10.1016/j.tsf.2004.05.120

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Bibliographic Details
Main Authors: Jagar, S., Singh, N., Mehta, S.S., Agrawal, N., Samudra, G., Balasubramanian, N.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
DUV 248 nm lithography
Fin patterning
FinFET
PSM
Tri-gate MOSFET
Online Access:http://scholarbank.nus.edu.sg/handle/10635/54148
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Institution: National University of Singapore
Description
Summary:10.1016/j.tsf.2004.05.120

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