A FinFET and Tri-gate MOSFET's channel structure patterning and its influence on the device performance

10.1016/j.tsf.2004.05.120

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Bibliographic Details
Main Authors:	Jagar, S., Singh, N., Mehta, S.S., Agrawal, N., Samudra, G., Balasubramanian, N.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	DUV 248 nm lithography Fin patterning FinFET PSM Tri-gate MOSFET
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/54148
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Institution:	National University of Singapore

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