Electron mobility enhancement using ultrathin pure Ge on Si substrate

• Main Authors: Yeo, C.C., Cho, B.J., Gao, F., Lee, S.J., Lee, M.H., Yu, C.-Y., Liu, C.W., Tang, L.J., Lee, T.W.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Effective electron mobility; Ge; High-K gate dielectric
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/55851
• Institution: National University of Singapore

10.1109/LED.2005.855420