Electron mobility enhancement using ultrathin pure Ge on Si substrate

Electron mobility enhancement using ultrathin pure Ge on Si substrate

10.1109/LED.2005.855420

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Bibliographic Details
Main Authors: Yeo, C.C., Cho, B.J., Gao, F., Lee, S.J., Lee, M.H., Yu, C.-Y., Liu, C.W., Tang, L.J., Lee, T.W.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Effective electron mobility
Ge
High-K gate dielectric
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55851
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Institution: National University of Singapore

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