Modeling of stress-retarded thermal oxidation of nonplanar silicon structures for realization of nanoscale devices

Modeling of stress-retarded thermal oxidation of nonplanar silicon structures for realization of nanoscale devices

10.1109/LED.2010.2047375

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Bibliographic Details
Main Authors: Ma, F.-J., Rustagi, S.C., Samudra, G.S., Zhao, H., Singh, N., Lo, G.-Q., Kwong, D.-L.
Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
Format: Article
Published: 2014
Subjects:
2-D oxidation
Nanowire (NW)
orientation dependence
self-limiting
shape engineering
stress retardation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56676
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Institution: National University of Singapore

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