Reliability of thin gate oxides irradiated under X-ray lithography conditions

• Main Authors: Cho, B.J., Kim, S.J., Ang, C.H., Ling, C.H., Joo, M.S., Yeo, I.S.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Quasi-breakdown; Radiation-induced leakage current (RILC); Stress-induced leakage current (SILC); Ultra-thin gate oxide; X-ray lithography
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/57246

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers