Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation

Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation

10.1109/LED.2008.923712

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Bibliographic Details
Main Authors: Wong, H.-S., Koh, A.T.-Y., Chin, H.-C., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Antimony segregation
Parasitic series resistance
Salicidation
Schottky barrier (SB)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57448
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Institution: National University of Singapore
Description
Summary:10.1109/LED.2008.923712

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