Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation

• Main Authors: Wong, H.-S., Koh, A.T.-Y., Chin, H.-C., Chan, L., Samudra, G., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Antimony segregation; Parasitic series resistance; Salicidation; Schottky barrier (SB)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/57448
• Institution: National University of Singapore

10.1109/LED.2008.923712