Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation

Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation

10.1109/LED.2008.923712

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Bibliographic Details
Main Authors: Wong, H.-S., Koh, A.T.-Y., Chin, H.-C., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Antimony segregation
Parasitic series resistance
Salicidation
Schottky barrier (SB)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57448
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-574482023-10-30T10:25:29Z Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation Wong, H.-S. Koh, A.T.-Y. Chin, H.-C. Chan, L. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Antimony segregation Parasitic series resistance Salicidation Schottky barrier (SB) 10.1109/LED.2008.923712 IEEE Electron Device Letters 29 7 756-758 EDLED 2014-06-17T03:06:18Z 2014-06-17T03:06:18Z 2008-07 Article Wong, H.-S., Koh, A.T.-Y., Chin, H.-C., Chan, L., Samudra, G., Yeo, Y.-C. (2008-07). Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation. IEEE Electron Device Letters 29 (7) : 756-758. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.923712 07413106 http://scholarbank.nus.edu.sg/handle/10635/57448 000257626000032 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Antimony segregation
Parasitic series resistance
Salicidation
Schottky barrier (SB)
spellingShingle Antimony segregation
Parasitic series resistance
Salicidation
Schottky barrier (SB)
Wong, H.-S.
Koh, A.T.-Y.
Chin, H.-C.
Chan, L.
Samudra, G.
Yeo, Y.-C.
Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation
description 10.1109/LED.2008.923712
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Wong, H.-S.
Koh, A.T.-Y.
Chin, H.-C.
Chan, L.
Samudra, G.
Yeo, Y.-C.
format Article
author Wong, H.-S.
Koh, A.T.-Y.
Chin, H.-C.
Chan, L.
Samudra, G.
Yeo, Y.-C.
author_sort Wong, H.-S.
title Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation
title_short Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation
title_full Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation
title_fullStr Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation
title_full_unstemmed Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation
title_sort source and drain series resistance reduction for n-channel transistors using solid antimony (sb) segregation (ssbs) during silicidation
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/57448
_version_ 1781781414261293056

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