Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressors

Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressors

10.1063/1.3000481

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Bibliographic Details
Main Authors: Madan, A., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57523
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Institution: National University of Singapore
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Summary:10.1063/1.3000481

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