Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressors

Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressors

10.1063/1.3000481

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Bibliographic Details
Main Authors:	Madan, A., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57523
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

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