Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

10.1109/LED.2007.911608

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書目詳細資料
Main Authors: Wang, X.P., Li, M.-F., Yu, H.Y., Yang, J.J., Chen, J.D., Zhu, C.X., Du, A.Y., Loh, W.Y., Biesemans, S., Chin, A., Lo, G.Q., Kwong, D.-L.
其他作者: ELECTRICAL & COMPUTER ENGINEERING
格式: Article
出版: 2014
主題:
CMOS
Fermi level pinning
HfLaO
High-κ dielectric
Interdiffusion
Metal gate
Work function
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/57820
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總結:10.1109/LED.2007.911608

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