Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

• Main Authors: Wang, X.P., Li, M.-F., Yu, H.Y., Yang, J.J., Chen, J.D., Zhu, C.X., Du, A.Y., Loh, W.Y., Biesemans, S., Chin, A., Lo, G.Q., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: CMOS; Fermi level pinning; HfLaO; High-κ dielectric; Interdiffusion; Metal gate; Work function
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/57820
• Institution: National University of Singapore

10.1109/LED.2007.911608