Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

10.1109/LED.2007.911608

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Bibliographic Details
Main Authors:	Wang, X.P., Li, M.-F., Yu, H.Y., Yang, J.J., Chen, J.D., Zhu, C.X., Du, A.Y., Loh, W.Y., Biesemans, S., Chin, A., Lo, G.Q., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	CMOS Fermi level pinning HfLaO High-κ dielectric Interdiffusion Metal gate Work function
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57820
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-57820
record_format	dspace
spelling	sg-nus-scholar.10635-578202024-11-13T14:47:13Z Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric Wang, X.P. Li, M.-F. Yu, H.Y. Yang, J.J. Chen, J.D. Zhu, C.X. Du, A.Y. Loh, W.Y. Biesemans, S. Chin, A. Lo, G.Q. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING NUS NANOSCIENCE & NANOTECH INITIATIVE CMOS Fermi level pinning HfLaO High-κ dielectric Interdiffusion Metal gate Work function 10.1109/LED.2007.911608 IEEE Electron Device Letters 29 1 50-53 EDLED 2014-06-17T03:10:33Z 2014-06-17T03:10:33Z 2008-01 Article Wang, X.P., Li, M.-F., Yu, H.Y., Yang, J.J., Chen, J.D., Zhu, C.X., Du, A.Y., Loh, W.Y., Biesemans, S., Chin, A., Lo, G.Q., Kwong, D.-L. (2008-01). Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric. IEEE Electron Device Letters 29 (1) : 50-53. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.911608 07413106 http://scholarbank.nus.edu.sg/handle/10635/57820 000252098100015 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	CMOS Fermi level pinning HfLaO High-κ dielectric Interdiffusion Metal gate Work function
spellingShingle	CMOS Fermi level pinning HfLaO High-κ dielectric Interdiffusion Metal gate Work function Wang, X.P. Li, M.-F. Yu, H.Y. Yang, J.J. Chen, J.D. Zhu, C.X. Du, A.Y. Loh, W.Y. Biesemans, S. Chin, A. Lo, G.Q. Kwong, D.-L. Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric
description	10.1109/LED.2007.911608
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wang, X.P. Li, M.-F. Yu, H.Y. Yang, J.J. Chen, J.D. Zhu, C.X. Du, A.Y. Loh, W.Y. Biesemans, S. Chin, A. Lo, G.Q. Kwong, D.-L.
format	Article
author	Wang, X.P. Li, M.-F. Yu, H.Y. Yang, J.J. Chen, J.D. Zhu, C.X. Du, A.Y. Loh, W.Y. Biesemans, S. Chin, A. Lo, G.Q. Kwong, D.-L.
author_sort	Wang, X.P.
title	Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric
title_short	Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric
title_full	Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric
title_fullStr	Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric
title_full_unstemmed	Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric
title_sort	widely tunable work function tan/ru stacking layer on hflao gate dielectric
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57820
_version_	1821228605002219520

Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

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