Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate

10.1063/1.2402943

Saved in:

Bibliographic Details
Main Authors:	Yu, H.P., Pey, K.L., Choi, W.K., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z., Tung, C.H.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57826
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-57826
record_format	dspace
spelling	sg-nus-scholar.10635-578262023-10-25T23:34:21Z Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate Yu, H.P. Pey, K.L. Choi, W.K. Antoniadis, D.A. Fitzgerald, E.A. Chi, D.Z. Tung, C.H. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2402943 Applied Physics Letters 89 23 - APPLA 2014-06-17T03:10:37Z 2014-06-17T03:10:37Z 2006 Article Yu, H.P., Pey, K.L., Choi, W.K., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z., Tung, C.H. (2006). Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate. Applied Physics Letters 89 (23) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2402943 00036951 http://scholarbank.nus.edu.sg/handle/10635/57826 000242709200138 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.2402943
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yu, H.P. Pey, K.L. Choi, W.K. Antoniadis, D.A. Fitzgerald, E.A. Chi, D.Z. Tung, C.H.
format	Article
author	Yu, H.P. Pey, K.L. Choi, W.K. Antoniadis, D.A. Fitzgerald, E.A. Chi, D.Z. Tung, C.H.
spellingShingle	Yu, H.P. Pey, K.L. Choi, W.K. Antoniadis, D.A. Fitzgerald, E.A. Chi, D.Z. Tung, C.H. Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate
author_sort	Yu, H.P.
title	Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate
title_short	Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate
title_full	Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate
title_fullStr	Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate
title_full_unstemmed	Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate
title_sort	work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57826
_version_	1781781483325751296

Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate

Similar Items