Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement

Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement

Electron device letters

Saved in:
Bibliographic Details
Main Authors: Yeow, Y.T., Ling, C.H., Ah, L.K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62510
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:Electron device letters

Similar Items