Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement

Electron device letters

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Main Authors:	Yeow, Y.T., Ling, C.H., Ah, L.K.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/62510
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-62510
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spelling	sg-nus-scholar.10635-625102015-01-06T10:00:06Z Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement Yeow, Y.T. Ling, C.H. Ah, L.K. ELECTRICAL ENGINEERING Electron device letters 12 7 366-368 EDLED 2014-06-17T06:51:51Z 2014-06-17T06:51:51Z 1991-07 Article Yeow, Y.T.,Ling, C.H.,Ah, L.K. (1991-07). Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement. Electron device letters 12 (7) : 366-368. ScholarBank@NUS Repository. 01938576 http://scholarbank.nus.edu.sg/handle/10635/62510 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Electron device letters
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Yeow, Y.T. Ling, C.H. Ah, L.K.
format	Article
author	Yeow, Y.T. Ling, C.H. Ah, L.K.
spellingShingle	Yeow, Y.T. Ling, C.H. Ah, L.K. Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement
author_sort	Yeow, Y.T.
title	Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement
title_short	Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement
title_full	Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement
title_fullStr	Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement
title_full_unstemmed	Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement
title_sort	observation of mosfet degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/62510
_version_	1681085788980248576

Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement

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