Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement

Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement

Electron device letters

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Yeow, Y.T., Ling, C.H., Ah, L.K.
مؤلفون آخرون:	ELECTRICAL ENGINEERING
التنسيق:	مقال
منشور في:	2014
الوصول للمادة أونلاين:	http://scholarbank.nus.edu.sg/handle/10635/62510
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
المؤسسة:	National University of Singapore

مواد مشابهة

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