Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement
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Main Authors: | Yeow, Y.T., Ling, C.H., Ah, L.K. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/62510 |
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Institution: | National University of Singapore |
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