Understanding of carbon/fluorine Co-implant effect on boron-doped junction formed during soak annealing

Understanding of carbon/fluorine Co-implant effect on boron-doped junction formed during soak annealing

10.1149/1.2806801

Saved in:
Bibliographic Details
Main Authors: Yeong, S.H., Colombeau, B., Mok, K.R.C., Benistant, F., Liu, C.J., Wee, A.T.S., Chan, L., Ramam, A., Srinivasan, M.P.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/64769
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1149/1.2806801

Similar Items