Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs

Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs

10.1088/0268-1242/17/6/101

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Bibliographic Details
Main Authors: Lek, C.M., Cho, B.J., Ang, C.H., Tan, S.S., Loh, W.Y., Zhen, J.Z., Lap, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Others
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/67966
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Institution: National University of Singapore
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Summary:10.1088/0268-1242/17/6/101

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