A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistors

A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistors

10.1109/VTSA.2008.4530787

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Bibliographic Details
Main Authors: Wong, H.-S., Koh, A.T.-Y., Chin, H.-C., Lee, R.T.-P., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/68928
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Institution: National University of Singapore
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Summary:10.1109/VTSA.2008.4530787

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