A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistors

• Main Authors: Wong, H.-S., Koh, A.T.-Y., Chin, H.-C., Lee, R.T.-P., Chan, L., Samudra, G., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/68928
• Institution: National University of Singapore

10.1109/VTSA.2008.4530787