A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistors
10.1109/VTSA.2008.4530787
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2014
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sg-nus-scholar.10635-689282023-10-27T07:16:15Z A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistors Wong, H.-S. Koh, A.T.-Y. Chin, H.-C. Lee, R.T.-P. Chan, L. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VTSA.2008.4530787 International Symposium on VLSI Technology, Systems, and Applications, Proceedings 36-37 2014-06-19T02:54:49Z 2014-06-19T02:54:49Z 2008 Conference Paper Wong, H.-S., Koh, A.T.-Y., Chin, H.-C., Lee, R.T.-P., Chan, L., Samudra, G., Yeo, Y.-C. (2008). A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistors. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 36-37. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2008.4530787 9781424416158 http://scholarbank.nus.edu.sg/handle/10635/68928 000256564900016 Scopus |
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National University of Singapore |
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NUS Library |
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Asia |
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Singapore Singapore |
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NUS Library |
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ScholarBank@NUS |
| description |
10.1109/VTSA.2008.4530787 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Wong, H.-S. Koh, A.T.-Y. Chin, H.-C. Lee, R.T.-P. Chan, L. Samudra, G. Yeo, Y.-C. |
| format |
Conference or Workshop Item |
| author |
Wong, H.-S. Koh, A.T.-Y. Chin, H.-C. Lee, R.T.-P. Chan, L. Samudra, G. Yeo, Y.-C. |
| spellingShingle |
Wong, H.-S. Koh, A.T.-Y. Chin, H.-C. Lee, R.T.-P. Chan, L. Samudra, G. Yeo, Y.-C. A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistors |
| author_sort |
Wong, H.-S. |
| title |
A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistors |
| title_short |
A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistors |
| title_full |
A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistors |
| title_fullStr |
A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistors |
| title_full_unstemmed |
A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistors |
| title_sort |
new salicidation process with solid antimony (sb) segregation (ssbs) for achieving sub-0.1 ev effective schottky barrier height and parasitic series resistance reduction in n-channel transistors |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/68928 |
| _version_ |
1781783073821556736 |