Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack

Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack

10.1149/1.3203977

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Bibliographic Details
Main Authors: Ya Lim, P.S., Chi, D.Z., Lo, G.Q., Yeo, Y.C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70007
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Institution: National University of Singapore
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Summary:10.1149/1.3203977

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