Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack
10.1149/1.3203977
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Main Authors: | Ya Lim, P.S., Chi, D.Z., Lo, G.Q., Yeo, Y.C. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/70007 |
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Institution: | National University of Singapore |
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