Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performance

10.1109/VLSIT.2008.4588551

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Main Authors:	Lee, R.T.-P., Koh, A.T.-Y., Fang, W.-W., Tan, K.-M., Lim, A.E.-J., Liow, T.-Y., Chow, S.-Y., Yong, A.M., Hoong, S.W., Lo, G.-Q., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/71171
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-71171
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spelling	sg-nus-scholar.10635-711712015-02-04T01:48:08Z Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performance Lee, R.T.-P. Koh, A.T.-Y. Fang, W.-W. Tan, K.-M. Lim, A.E.-J. Liow, T.-Y. Chow, S.-Y. Yong, A.M. Hoong, S.W. Lo, G.-Q. Samudra, G.S. Chi, D.-Z. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VLSIT.2008.4588551 Digest of Technical Papers - Symposium on VLSI Technology 28-29 DTPTE 2014-06-19T03:20:42Z 2014-06-19T03:20:42Z 2008 Conference Paper Lee, R.T.-P.,Koh, A.T.-Y.,Fang, W.-W.,Tan, K.-M.,Lim, A.E.-J.,Liow, T.-Y.,Chow, S.-Y.,Yong, A.M.,Hoong, S.W.,Lo, G.-Q.,Samudra, G.S.,Chi, D.-Z.,Yeo, Y.-C. (2008). Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performance. Digest of Technical Papers - Symposium on VLSI Technology : 28-29. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSIT.2008.4588551" target="_blank">https://doi.org/10.1109/VLSIT.2008.4588551</a> 9781424418053 07431562 http://scholarbank.nus.edu.sg/handle/10635/71171 000259116200010 Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/VLSIT.2008.4588551
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lee, R.T.-P. Koh, A.T.-Y. Fang, W.-W. Tan, K.-M. Lim, A.E.-J. Liow, T.-Y. Chow, S.-Y. Yong, A.M. Hoong, S.W. Lo, G.-Q. Samudra, G.S. Chi, D.-Z. Yeo, Y.-C.
format	Conference or Workshop Item
author	Lee, R.T.-P. Koh, A.T.-Y. Fang, W.-W. Tan, K.-M. Lim, A.E.-J. Liow, T.-Y. Chow, S.-Y. Yong, A.M. Hoong, S.W. Lo, G.-Q. Samudra, G.S. Chi, D.-Z. Yeo, Y.-C.
spellingShingle	Lee, R.T.-P. Koh, A.T.-Y. Fang, W.-W. Tan, K.-M. Lim, A.E.-J. Liow, T.-Y. Chow, S.-Y. Yong, A.M. Hoong, S.W. Lo, G.-Q. Samudra, G.S. Chi, D.-Z. Yeo, Y.-C. Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performance
author_sort	Lee, R.T.-P.
title	Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performance
title_short	Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performance
title_full	Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performance
title_fullStr	Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performance
title_full_unstemmed	Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performance
title_sort	novel and cost-efficient single metallic silicide integration solution with dual schottky-barrier achieved by aluminum inter-diffusion for finfet cmos technology with enhanced performance
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/71171
_version_	1681087334991265792

Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performance

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