Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET

Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET

10.1109/ISDRS.2007.4422419

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Bibliographic Details
Main Authors: Wong, H.-S., Ang, K.-W., Chan, L., Hoe, K.-M., Tung, C.-H., Balasubramaniam, N., Weeks, D., Landin, T., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/71821
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Institution: National University of Singapore
Description
Summary:10.1109/ISDRS.2007.4422419

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