Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET

10.1109/ISDRS.2007.4422419

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Main Authors:	Wong, H.-S., Ang, K.-W., Chan, L., Hoe, K.-M., Tung, C.-H., Balasubramaniam, N., Weeks, D., Landin, T., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/71821
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-71821
record_format	dspace
spelling	sg-nus-scholar.10635-718212015-02-09T10:14:34Z Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET Wong, H.-S. Ang, K.-W. Chan, L. Hoe, K.-M. Tung, C.-H. Balasubramaniam, N. Weeks, D. Landin, T. Spear, J. Thomas, S.G. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ISDRS.2007.4422419 2007 International Semiconductor Device Research Symposium, ISDRS - 2014-06-19T03:28:12Z 2014-06-19T03:28:12Z 2007 Conference Paper Wong, H.-S.,Ang, K.-W.,Chan, L.,Hoe, K.-M.,Tung, C.-H.,Balasubramaniam, N.,Weeks, D.,Landin, T.,Spear, J.,Thomas, S.G.,Samudra, G.,Yeo, Y.-C. (2007). Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET. 2007 International Semiconductor Device Research Symposium, ISDRS : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ISDRS.2007.4422419" target="_blank">https://doi.org/10.1109/ISDRS.2007.4422419</a> 1424418917 http://scholarbank.nus.edu.sg/handle/10635/71821 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/ISDRS.2007.4422419
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wong, H.-S. Ang, K.-W. Chan, L. Hoe, K.-M. Tung, C.-H. Balasubramaniam, N. Weeks, D. Landin, T. Spear, J. Thomas, S.G. Samudra, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Wong, H.-S. Ang, K.-W. Chan, L. Hoe, K.-M. Tung, C.-H. Balasubramaniam, N. Weeks, D. Landin, T. Spear, J. Thomas, S.G. Samudra, G. Yeo, Y.-C.
spellingShingle	Wong, H.-S. Ang, K.-W. Chan, L. Hoe, K.-M. Tung, C.-H. Balasubramaniam, N. Weeks, D. Landin, T. Spear, J. Thomas, S.G. Samudra, G. Yeo, Y.-C. Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET
author_sort	Wong, H.-S.
title	Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET
title_short	Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET
title_full	Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET
title_fullStr	Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET
title_full_unstemmed	Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET
title_sort	source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in soi n-fet
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/71821
_version_	1681087453565288448

Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET

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